[10p-E208-1~11] 16.1 Fundamental properties, evaluation, process and devices in disordered materials | The 87th JSAP Autumn Meeting 2026

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Oral presentation16 Amorphous and Microcrystalline Materials : 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[10p-E208-1~11]16.1 Fundamental properties, evaluation, process and devices in disordered materials

Thu. Sep 10, 2026 1:30 PM - 4:30 PM JST
Thu. Sep 10, 2026 4:30 AM - 7:30 AM UTC

E208 (First Year Education Bld. E Block)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[10p-E208-1]Optical and electrical properties of Sb-Se films deposited by sputtering

〇(M2)Shogo Watanabe¹, Tamihiro Gotoh¹ (1.Gunma Univ.)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[10p-E208-2]Optical properties of Se-Te thin films deposited by evaporation and sputtering

〇(M2)Toi Otake¹, Tamihiro Gotoh¹ (1.Gunma Univ.)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[10p-E208-3]Optical and electrical properties of sputtered Sn-Se films

〇(M2)Kenichiro Nishida¹, Tamihiro Gotoh¹ (1.Gunma Univ.)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-E208-4]Investigation of thickness dependence of amorphous binary Ge-Te thin films for the selector application

〇(M2)Daiki Inose¹, Mihyeon Kim¹, Shogo Hatayama², Yuta Saito^1,2,3 (1.Tohoku Univ., 2.SFRC, AIST, 3.GXT, Tohoku Univ.)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[10p-E208-5]Formation of trigonal Te nanoflower by room temperature sputtering deposition

〇(M2)Yuta Tsuchihashi¹, Jun Yamasawa¹, Toshihiro Nakaoka¹ (1.Sophia Univ.)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[10p-E208-6]Phase change control of Te thin films using laser irradiation and substrate heating

〇Keisuke Hamano¹, Bokusui Nakayama¹, Yuta Saito^2,3, Paul Fons¹, Toshiharu Saiki¹ (1.Keio Univ., 2.Tohoku Univ., 3.GXT Tohoku Univ.)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[10p-E208-7]Bias-polarity-dependent resistance change in an Ag₂Te device under simultaneous RF wave and DC bias

〇(M2)Jun Yamasawa¹, Yuta Tsuchihashi¹, Toshihiro Nakaoka¹ (1.Sophia Univ.)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[10p-E208-8]Phase-Change and Resistive Switching Behaviors of Quasi-One-Dimensional Transition Metal Chalcogenide HfTe₅ Thin Films

〇(D)Shuhei Orihara¹, Yi Shuang^2,3, Daisuke Ando¹, Yuji Sutou^1,3 (1.Tohoku Univ. (Eng), 2.Tohoku Univ. (FRIS), 3.Tohoku Univ. (AIMR))

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

The 87th JSAP Autumn Meeting 2026

Session Details