[10p-E208-1~11] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[10p-E208-7] Bias-polarity-dependent resistance change in an Ag₂Te device under simultaneous RF wave and DC bias

〇(M2)Jun Yamasawa¹, Yuta Tsuchihashi¹, Toshihiro Nakaoka¹ (1.Sophia Univ.)

Keywords:

chalcogenide,RF wave,resistive switching device

Analog memory devices that emulate synaptic behavior in the human brain have attracted considerable attention. We previously demonstrated RF-wave-induced resistance modulation corresponding to synaptic weights in a monoclinic Ag₂Te resistive switching device. In this study, we simultaneously applied RF waves and a DC bias to investigate the influence of a DC electric field on RF-induced resistance modulation. We found a polarity-dependent response characterized by an abrupt decrease in resistance occurring only once immediately after switching the bias polarity from positive to negative.