Presentation Information
[10p-E208-7]Bias-polarity-dependent resistance change in an Ag2Te device under simultaneous RF wave and DC bias
〇(M2)Jun Yamasawa1, Yuta Tsuchihashi1, Toshihiro Nakaoka1 (1.Sophia Univ.)
Keywords:
chalcogenide,RF wave,resistive switching device
Analog memory devices that emulate synaptic behavior in the human brain have attracted considerable attention. We previously demonstrated RF-wave-induced resistance modulation corresponding to synaptic weights in a monoclinic Ag2Te resistive switching device. In this study, we simultaneously applied RF waves and a DC bias to investigate the influence of a DC electric field on RF-induced resistance modulation. We found a polarity-dependent response characterized by an abrupt decrease in resistance occurring only once immediately after switching the bias polarity from positive to negative.