Presentation Information
[10p-E208-8]Phase-Change and Resistive Switching Behaviors of Quasi-One-Dimensional Transition Metal Chalcogenide HfTe5 Thin Films
〇(D)Shuhei Orihara1, Yi Shuang2,3, Daisuke Ando1, Yuji Sutou1,3 (1.Tohoku Univ. (Eng), 2.Tohoku Univ. (FRIS), 3.Tohoku Univ. (AIMR))
Keywords:
thin film,phase-change,transition metal chalcogenide
Quasi-one-dimensional transition metal chalcogenide HfTe5 thin films were fabricated using RF magnetron co-sputtering, and their phase-change behavior during annealing and resistance switching characteristics were investigated. A sharp decrease in resistance, associated with crystallization from the amorphous phase, occurred at approximately 180°C, followed by a continuous decrease in resistance up to 300°C without any significant changes in the crystal structure. Furthermore, reversible and gradual resistance switching was reproducibly observed in HfTe5 memory devices, demonstrating the potential for continuous and reversible resistance control in HfTe5 thin films.