Presentation Information
[10p-E215-6]Coupling between the Si–O–Si asymmetric stretching vibration and Si valence-band-maximum electronic states on oxygen-adsorbed Si(001) surfaces
〇Sakura-Nishino Takeda1 (1.NAIST)
Keywords:
Si(001),Electron-Phonon Coupling,ARPES
Scattering of carriers in Si nanodevices by phonons, surface roughness, charges, and other perturbations reduces the carrier mean free path and consequently degrades carrier mobility. In particular, when carriers propagate near the gate-dielectric interface, they can be remotely affected and scattered by phonons in the gate dielectric. Understanding and controlling these scattering processes are therefore essential for improving carrier mobility. Conventionally, scattering mechanisms have been investigated mainly through direct measurements of carrier mobility. In this study, we report angle-resolved photoemission spectroscopy observations of electron–phonon coupling involving electronic states at the valence-band maximum of oxygen-adsorbed Si(001) and the Si–O–Si asymmetric stretching vibration.