[10p-E215-1~15] CS.10 Code-sharing session of 6.5&7.5

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-E215-7] Nonlinear oxygen pressure dependence of Si dry oxidation: Comparison between p-Si(001) and n-Si(001) surfaces

〇Yuki Okabe¹, Yasutaka Tsuda², Hengyu Wen¹, Akitaka Yoshigoe², Yuji Takakuwa³, Shuichi Ogawa¹ (1.Nihon Univ., 2.JAEA, 3.Tohoku Univ)

Keywords:

Si thermal oxidation,Real-time XPS,Surface reaction

We analyzed the initial oxidation of n-type and p-type Si(001) surfaces using an integrated Si oxidation reaction model that considers point defect generation due to oxidation-induced stress and Si-O cleavage. Loop A was accelerated in n-type Si, which is attributed to the promotion of chemiadsorbed oxygen generation by electron tunneling. The branching probability γA from Loop A to Loop B showed a nonlinear dependence on oxygen partial pressure at 200°C, and it was revealed that this reflects the effects of thermal hole generation efficiency and minority carrier capture processes.