Presentation Information
[10p-E218-7]I/V characterization of TSVs focused on sidewall morphology and dielectric film quality
〇Takuro Kono1, Ryuhei Sekifuji2, Fumito Imura2, Hiroyuki Tanaka3, Noriko Miura3, Shiro Hara3, Toru Aonishi4, Ichiro Akai5, Yasuo Terasawa1, Takeshi Hashishin5 (1.NIDEK Co., LTD., 2.Hundred Semiconductors Inc., 3.AIST, 4.Univ. of Tokyo, 5.Kumamoto Univ.)
Keywords:
TSV,Minimal Fab