The 87th JSAP Autumn Meeting 2026
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Session Details

Oral presentation13 Semiconductors : 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[10p-E218-1~13]13.4 Si processing /Si based thin film / MEMS / Equipment technology

Thu. Sep 10, 2026 1:30 PM - 5:00 PM JST
Thu. Sep 10, 2026 4:30 AM - 8:00 AM UTC
E218 (First Year Education Bld. E Block)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[10p-E218-1]The Impact of Silicon Wafer Processing on Devices characteristics

〇Tatsuya Fujita1, Ryoma Maruyama1, Kazushige Sato2, Fumito Imura1, Shiro Hara1,3 (1.Inc.Hundred Semiconductors, 2.MINIMAL, 3.AIST)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[10p-E218-2]Wafer drying using wafer droplet cleaning technology for a wafer with small diameter

〇Kazumasa Nemoto1, Noriko Miura1, Shinichi Ikeda1, Shiro Hara1,2 (1.AIST, 2.Hundred)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[10p-E218-3]Development of a Reverse Sputtering Capability to a Minimal Fab Sputtering Tool

〇Shuichi Noda1, Hiroshige Kogayu2, Yuuki Yabuta3, Naoko Yamamoto3, Chengnan Pan3, Ryuichiro Kamei3, Noriko Miura1, Shinichi Ikeda1, Shiro Hra1,2 (1.AIST, 2.Hundred Semiconductors, 3.Seinan-Kogyo)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[10p-E218-4]Stabilization of the Oxidation Process in Minimal Fab

〇Hiroyoshi Hongoh1, Shuichi Noda1, Noriko Miura1, Shinichi Ikeda1, Shiro Hara1,2 (1.AIST, 2.Hundred)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[10p-E218-5]Optimization of Deep Via-Hole Etching Profiles in Minimal Fab Using the Taguchi L18 Orthogonal Array

〇Hiroyuki Tanaka1, Yoshiyuki Nozawa2, Fumito Imura3, Noriko Miura1, Shinichi Ikeda1, Shiro Hara1,3 (1.AIST, 2.SPPT, 3.HS)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[10p-E218-6]Stabilizing Etching Rate of Micro-Plasma Etcher for Device Production in Minimal Fab

〇Ryuhei Sekifuji1, Fumito Imura1, Hiroyuki Tanaka2, Noriko Miura2, Shinichi Ikeda2, Shiro Hara1,2 (1.Hundred Semiconductors, 2.AIST)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[10p-E218-7]I/V characterization of TSVs focused on sidewall morphology and dielectric film quality

〇Takuro Kono1, Ryuhei Sekifuji2, Fumito Imura2, Hiroyuki Tanaka3, Noriko Miura3, Shiro Hara3, Toru Aonishi4, Ichiro Akai5, Yasuo Terasawa1, Takeshi Hashishin5 (1.NIDEK Co., LTD., 2.Hundred Semiconductors Inc., 3.AIST, 4.Univ. of Tokyo, 5.Kumamoto Univ.)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[10p-E218-8]Dependence of photoresist width on exposure amount in Minimal Fab lithography

〇Aoi Kamada1, Ryuhei Sekifuji1, Fumito Imura1, Noriko Miura2, Shinichi Ikeda2, Shiro Hara1,2 (1.Hundred, 2.AIST)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[10p-E218-9]Challenges and Solutions in Minimal Fab Muilt-Tip Packaging Processes for the Production of Edge on Chip (EoC)

〇Noriko Miura1, Hiroshi Sugiyama2, Kazumasa Nemoto1, Hiroshige Kogayu2, Tetsuki Tachibana2, Fumito Imura2, Shinichi Ikeda1, Shiro Hara1,2 (1.AIST, 2.Hundred)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[10p-E218-10]Evaluation of HfNx Diodes Using a Minimal Fab Hydrogen Annealing Tool

〇Shuichi Noda1, Kazushige Sato2, Yuuki Yabuta3, Naoko Yamamoto3, Ryuichiro Kamei3, Noriko Miura1, Shinichi Ikeda1, Kangbai Li4, Shun-ichiro Oumi4, Shiro Hara1,5 (1.AIST, 2.MINIMAL, 3.Seinan-Kogyo, 4.Science Tokyo, 5.Hundred Semiconductors)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[10p-E218-11]Application study of hydrogen-atmosphere surface-treatment using the Minimal laser heating tool to semiconductor CMOS devices(Ⅳ)

〇kazushige sato1,2, Takashi Chiba1,2, Masao Terada1,2, Kengo Hamada1,2, Yoshiaki Kanamori3, Noriko Miura4, Shinichi Ikeda4, Shiro Hara4 (1.MINIMAL, 2.SAKAGUCHI, 3.TOHOKU UNIV., 4.AIST)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[10p-E218-12]Development of a Neuron CMOS Device in Minimal-Fab Process

〇Hiroshige Kogayu1, Noriko Miura2, Hirotaka Furukawa3, Masaaki Fukuhara3, Shiro Hara1,2 (1.Hundred, 2.AIST, 3.Tokai Univ.)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[10p-E218-13]Dependence of Time Interval Between High-Voltage Application and Microwave Irradiation on Plasma Generation Probability in High-Pressure Microwave Excited Oxygen Plasma

〇(M2)Thiha Kyawswar1, Yusuke Nakano1, Yasunori Tanaka1, Tatsuo Ishijima1, Noriko Miura2, Shinichi Ikeda2, Shiro Hara2,4, Takeshi Aizawa3, Mitsunori Nogawa3, Yasuhiro Oonishi3, Hiroshi Sugiyama4, Fumito Imura4 (1.Kanazawa Univ., 2.AIST, 3.Yonekura MFG, 4.Hundred Semicon Inc)
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