[10p-E301-1~20] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-E301-1] Structural Characterization of High-Density Nitrogen-Doped Ga₂O₃ Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy

〇Toshiki Nakaoka¹, Kohki Tsujimoto¹, Yusuke Teramura¹, Shoma Takeda¹, Satoko Honda¹, Masataka Higashiwaki¹ (1.Osaka Metropolitan Univ.)

Keywords:

gallium oxide,semiconductor,molecular beam epitaxy

We have succeeded in growing nitrogen (N)-doped Ga₂O₃ thin films with N densities of 3 × 10¹⁸ – 3 × 10²¹ cm^-3 by plasma-assisted molecular beam epitaxy (PAMBE). In this work, we investigated structural properties of N-doped thin films and unintentionally doped Ga₂O₃ thin films grown on them by PAMBE. The upper limit of N doping density into Ga₂O₃ thin films without degradation of crystal quality was estimated to be around N = 1 × 10²¹ cm^-3.