Presentation Information
[10p-E301-10]Effects of plasma and growth temperature on Eu-doped Ga2O3 grown by sputtering-assisted MOCVD
〇(M1)Takuto Oshima1, Yoshikata Nakajima2, Masakazu Tane1, Jun Tatebayashi1,3 (1.The Univ. of Osaka, 2.INSD, 3.QIQB)
Keywords:
Gallium Oxide,Rare-Earth Doped Semiconductors,Metal-Organic Chemical Vapor Deposition
To establish a Sputtering Assisted Metal-Organic Chemical Vapor Deposition (SAMOCVD) method for Eu-doped Ga2O3, a promising material for quantum light sources, we are currently evaluating the structural and optical properties to investigate the effects of plasma and growth temperature. The results reveal that the growth rate of Eu-doped Ga2O3 films increases due to the contribution of the plasma. Furthermore, XRD measurements show that the full width at half maximum (FWHM) of β-Ga2O3 diffraction peak is minimized for the sample deposited at 700°C, suggesting that crystallization is most advanced in this sample. In addition, low-temperature PL measurements of the same sample exhibit luminescence originating from the 5D0 – 7F2 transition of Eu3+ ions.