[10p-E301-1~20] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[10p-E301-11] Surface morphology of HVPE-grown β-Ga₂O₃ layers on (011) substrates

〇Takayoshi Oshima¹, Yuichi Oshima¹ (1.NIMS)

Keywords:

Ga2O3,(011),HVPE