[10p-E301-1~20] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-E301-12] Micro Cracks : Killer Defects in (011) HVPE-Grown β-Ga₂O₃ Schottky Barrier Diodes

〇(M1C)Shotaro Nakaniwa¹, Eguchi Masanori², Sato Makoto¹, Saha Niloy Chandra¹, Lin Chiahung³, Sasaki Kohei³, Kasu Makoto¹ (1.Dept. Sci. Eng. Saga Univ., 2.Saga Univ. Synchrotron., 3.Novel Crystal Technology, Inc.)

Keywords:

(011) HVPE beta-type gallium oxide,schottky barrier diodes,micro crack

We report on the structural characterization of microcracks in a (0-1-1) HVPE-grown β-type gallium oxide Schottky barrier diode. Microcracks extending in the [100] direction were observed at the leakage sites where emission spots were detected under reverse Bias. Cross-sectional SEM observation from the [-100]* direction revealed that the killer defects were microcracks oriented along the (001) plane.