Presentation Information
[10p-E301-14]Pseudocubic Framework of β-Ga2O3 for Rationalizing Epitaxial Relationships of NiO Films
〇Takumi Ikenoue1, Masaki Yono1, Takayoshi Oshima2, Masao Miyake1, Toshiya Doi1 (1.Kyoto Univ., 2.NIMS)
Keywords:
mist CVD method,Ga2O3,NiO
β-Ga2O3 is an ultra-wide bandgap semiconductor promising for power device applications, and p-n diodes based on its heterojunction with the p-type semiconductor NiO have attracted attention. However, because β-Ga2O3 has a low-symmetry monoclinic crystal structure, it is difficult to intuitively understand its epitaxial relationships with cubic NiO. In this study, by treating β-Ga2O3 as a pseudocubic crystal based on the face-centered cubic oxygen sublattice, we systematically organized the epitaxial orientation relationships with NiO thin films deposited by mist CVD.