Presentation Information
[10p-E301-15]Epitaxial Growth of NiO on β-Ga2O3 (011) Substrates by Mist CVD Method
〇Masaki Yono1, Takumi Ikenoue1, Takayoshi Oshima2, Toshiya Doi1 (1.Kyoto Univ., 2.NIMS)
Keywords:
beta-gallium oxide,mist CVD method,epitaxial growth
The β-Ga2O3 (011) surface is expected to enable high-quality epitaxial growth because of its pit-free morphology. In this study, NiO thin films were grown on single-crystal β-Ga2O3 (011) substrates by mist CVD. Pole figure measurements of NiO {200} and comparison with simulated results confirmed epitaxial growth with the orientation relationship of NiO(93̄1)[110] // β-Ga2O3 (011)[001]. Furthermore, a NiO(200) peak was observed in a 2θ-ω scan aligned to β-Ga2O3 (1̄12) reflection, confirming the NiO(93̄1) orientation.