Presentation Information

6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-E301-17]Enhancement-Mode Ga₂O₃ CAVETs Fabricated Using Hot Implantation

〇(DC)Jun Morihara¹, Daisuke Matsuo², Shun Konno², Kosuke Usui², Shinya Takemura², Zhenwei Wang³, Romualdo A. Ferreyra¹, Kohei Tanaka², Masataka Higashiwaki¹ (1.Osaka Metropolitan Univ., 2.Nissin Ion Equipment Co., Ltd., 3.NICT)

Keywords:

Gallium Oxide,FET,Hot Implantation

In this study, we fabricated Ga₂O₃ current aperture vertical FETs (CAVETs) using hot implantation and investigated its electrical properties. The fabricated CAVETs showed favorable enhancement-mode device characteristics, including specific on-resistance of 72.6 mΩcm², drain current on/off ratio of more than 1 × 10¹¹, threshold voltage of + 3.8 V, and off-state breakdown voltage (V_br) of 756 V. Notably, the V_br is nearly 3 times higher than that of previously reported Ga₂O₃ CAVET. These results indicate that the hot implantation process is highly effective in enhancing Ga₂O₃ device characteristics.

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[10p-E301-17]Enhancement-Mode Ga2O3 CAVETs Fabricated Using Hot Implantation

Keywords:

[10p-E301-17]Enhancement-Mode Ga₂O₃ CAVETs Fabricated Using Hot Implantation