[10p-E301-1~20] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-E301-2] Electrical Characterization of Nitrogen-Doped (AlGa)₂O₃ Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy

〇Kohki Tsujimoto¹, Toshiki Nakaoka¹, Yusuke Teramura¹, Shoma Takeda¹, Satoko Honda¹, Masataka Higashiwaki¹ (1.Osaka Metropolitan Univ.)

Keywords:

Gallium Oxide,PAMBE,Aluminum gallium oxide

Nitrogen (N)-doped (AlGa)₂O₃ is expected to be applied to various Ga₂O₃ devices since it can form a large energy barrier at the junction interface with n-Ga₂O₃. We have developed plasma-assisted molecular beam epitaxy (PAMBE) growth techniques of N-doped (AlGa)₂O₃ thin films on Ga₂O₃ (010) substrates. In this study, we fabricated Schottky barrier diodes (SBDs) using the N-doped (AlGa)₂O₃ thin films and characterized their electrical properties.