[10p-E301-1~20] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

6:45 PM - 7:00 PM JST(9:45 AM - 10:00 AM UTC)

[10p-E301-20] Heavy n-type doping of (001) β-Ga₂O₃ by HVPE

〇Yuichi Oshima¹, Takayoshi Oshima¹, Chia-Hung Lin², Kohei Sasaki² (1.NIMS, 2.Novel Crystal Technology)

Keywords:

HVPE,doping