Presentation Information
[10p-E301-3]Nitrogen Doping Into Ga2O3 by Hot Implantation Process
〇(M1)Yuma Matsumoto1, Daisuke Matsuo2, Shun Konno2, Kosuke Usui2, Shinya Takemura2, Kouhei Tanaka2, Masataka Higashiwaki1 (1.Osaka Metropolitan Univ., 2.Nissin Ion Equipment Co., Ltd)
Keywords:
gallium oxide,ion implantation,semiconductor
When performing N doping into Ga2O3 by implantation process, high-temperature annealing over 1100°C is typically required to activate N. However, this process has a problem in that it causes charge depletion near the Ga2O3 surface. In high-density Si doping into Ga2O3, the hot implantation process provides a higher Si activation efficiency compared with that for room-temperature implantation. In this study, we investigated whether the N hot implantation process improves its activation efficiency and leads to reducing activation annealing temperature.