Presentation Information
[10p-E301-4]Evaluating Thermal Diffusion Behavior of Ion-Implanted Nitrogen in (010) β-Ga2O3
〇Takumi Ohtsuki1, Masataka Higashiwaki1,2 (1.NICT, 2.Osaka Metropolitan Univ.)
Keywords:
Gallium oxide,Nitrogen,Thermal diffusion
We report the thermal diffusion of ion-implanted nitrogen in β-Ga2O3 (010). After the post-implantation annealing, the depth profiles of the nitrogen were measured by SIMS. Although there are reports that nitrogen diffusion does not occur in the [001] direction even at 1100°C, in the [010] direction investigated in this study, diffusion was already occurring at 900°C, indicating a small effective diffusion coefficient. Furthermore, when similar experiments were performed on MBE-grown Ga2O3 thin films, it was found that nitrogen diffusion was inhibited and accumulated near the epitaxial layer/substrate interface.