[10p-E301-1~20] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-E301-5] Comparison of substrate orientations in homoepitaxial growth of N-doped β-Ga₂O₃ layers by HVPE

〇(D)Kentaro Chukudaaru Kakuta¹, Yutaka Koga¹, Takami Kawata¹, Takatoshi Kikawa¹, Yoshinao Kumagai¹ (1.Tokyo Univ. of Agric. and Tech.)

Keywords:

beta gallium oxide,Halide vapor phase epitaxy (HVPE),Nitrogen doping

For the development of high-performance β-Ga₂O₃ power devices, p-type doping of β-Ga₂O₃ has been investigated through intentional nitrogen doping using various homoepitaxial growth methods. In this study, N-doped β-Ga₂O₃ homoepitaxial layers were grown on β-Ga₂O₃(010) and (001) substrates by halide vapor phase epitaxy using NH₃ as a dopant source. Subsequently, the effects of substrate orientation on the controllability of the nitrogen concentration and the crystallinity of the N-doped layers were investigated.