[10p-E301-1~20] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-E301-8] Electrical properties of Si-doped AlScGaO thin films grown on vicinal β-Ga₂O₃ (100) substrates

〇Kazuki koreishi¹, Kohei Yoshimatsu¹, Akira Ohtomo¹ (1.Science Tokyo)

Keywords:

Gallium oxide,Ultrawide bandgap semiconductor,Electron transport properties

The bandgap engineering of β-Ga₂O₃ through alloying has the potential to enhance the breakdown voltages of power devices and adjust the response wavelength of deep ultraviolet (DUV) optoelectronic devices. However, the electrical conduction of AlGaO with an Al content higher than 25% has not yet been reported. In this study, we investigated a new lattice-matched AlScGaO alloy for use with a Ga₂O₃ substrate. Si-doped AlScGaO thin films were grown using pulsed laser deposition. Consequently, conductive AlScGaO with an Al+Sc content of up to 40% was obtained.