[10p-E308-1~18] 6.6 Probe Microscopy

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[10p-E308-1] Estimation of SiO₂/SiC interface-state emission time constant spectrum using variable-temperature time-resolved SNDM

〇Kohei Yamasue¹, Yasuo Cho² (1.RIEC, Tohoku Univ., 2.NICHe, Tohoku Univ.)

Keywords:

scanning nonlinear dielectric microscopy,semiconductor,SiC

Using time-resolved scanning nonlinear dielectric microscopy (SNDM) equipped with a temperature-control unit, we performed microscopic measurement of the carrier emission process at a thermally oxidized SiO₂/SiC interface under the tip. By extracting the multiple time constants contained in the emission process using singular value decomposition and fitting, we observed a time constant spectrum spanning approximately 0.3–10 μs and its shift toward shorter time constants with increasing temperature. We thus demonstrated that the time constant spectrum and its temperature dependence can be obtained at the nanoscale.