[10p-E308-1~18] 6.6 Probe Microscopy

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[10p-E308-9] Characterization of Single Donor Charge State Transition in n-type InAs by Scanning Tunneling Spectroscopy

〇Kiyoshi Kanisawa¹ (1.NTT-BRL)

Keywords:

semiconductor,surface,Scanning Tunneling Microcope

Charge state transitions of a single donor impurity found in the near-surface region was investigated using scanning tunneling spectroscopy at the cleaved surface of the n-type InAs(110). We report that the effective Fermi level, which dominates the donor charge states, is found to be determined by two inelastic processes, namely the optical phonon scattering of tunnel electrons and the secondary electron generation by the impact-ionization.