Presentation Information
[10p-E310-10]Prediction of incident angle dependence of SiO2 etching yield by MLP
〇Takashi Ichikawa1, Kazuaki Kurihara1, Takuyo Nakayama1, Rina Takashima1 (1.Kioxia Corporation)
Keywords:
plasma etching,MD,MLP
Angle-dependent etching yield is a key physical parameter that significantly influences the prediction of post-RIE topography. In this study, we attempted to predict the angle-dependent etching yield for SiO2 using molecular dynamics (MD) simulations based on the PFP, a general-purpose MLP. The results semi-quantitatively reproduced the trends observed in plasma beam experiments regarding angle dependence. In particular, the study reproduced the increase in yield for Ar+ at high energies and high incidence angles due to physical sputtering, as well as the increase in yield for CF3+ due to chemical sputtering. We also observed a trend in which physical sputtering becomes dominant at high incidence angles of 80 degrees or more, which was difficult to observe experimentally.