[10p-E310-1~11] Low-Temperature Plasma Technologies Enabling the Future of Semiconductor Manufacturing

5:20 PM - 5:35 PM JST(8:20 AM - 8:35 AM UTC)

[10p-E310-10] Prediction of incident angle dependence of SiO₂ etching yield by MLP

〇Takashi Ichikawa¹, Kazuaki Kurihara¹, Takuyo Nakayama¹, Rina Takashima¹ (1.Kioxia Corporation)

Keywords:

plasma etching,MD,MLP

Angle-dependent etching yield is a key physical parameter that significantly influences the prediction of post-RIE topography. In this study, we attempted to predict the angle-dependent etching yield for SiO₂ using molecular dynamics (MD) simulations based on the PFP, a general-purpose MLP. The results semi-quantitatively reproduced the trends observed in plasma beam experiments regarding angle dependence. In particular, the study reproduced the increase in yield for Ar+ at high energies and high incidence angles due to physical sputtering, as well as the increase in yield for CF3+ due to chemical sputtering. We also observed a trend in which physical sputtering becomes dominant at high incidence angles of 80 degrees or more, which was difficult to observe experimentally.