[10p-E310-1~11] Low-Temperature Plasma Technologies Enabling the Future of Semiconductor Manufacturing | The 87th JSAP Autumn Meeting 2026

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Symposium (Oral)Symposium : Low-Temperature Plasma Technologies Enabling the Future of Semiconductor Manufacturing

[10p-E310-1~11]Low-Temperature Plasma Technologies Enabling the Future of Semiconductor Manufacturing

Thu. Sep 10, 2026 1:30 PM - 5:45 PM JST
Thu. Sep 10, 2026 4:30 AM - 8:45 AM UTC

E310 (First Year Education Bld. E Block)

1:30 PM - 1:35 PM JST(4:30 AM - 4:35 AM UTC)

[10p-E310-1]Symposium Objectives

〇Hajime Sakakita¹, Hirofumi Kurita² (1.Meijo Univ., 2.Toyohashi Univ. Tech)

1:35 PM - 2:05 PM JST(4:35 AM - 5:05 AM UTC)

[10p-E310-2]Low-Temperature Plasma for Semiconductor Processing: Challenges and Outlook

〇Kenji Ishikawa¹, Hajime Sakakita² (1.Nagoya Univ., 2.Meijo Univ.)

2:05 PM - 2:35 PM JST(5:05 AM - 5:35 AM UTC)

[10p-E310-3]Microfabrication Process Development for Logic Devices: Current Status and Future Prospects

〇Satoshi Tanida¹, Mitsunari Sukekawa¹ (1.Rapidus)

2:35 PM - 2:50 PM JST(5:35 AM - 5:50 AM UTC)

[10p-E310-4]Unraveling etching mechanism for SiN film in cryogenic hydrogen-fluoride plasmas

〇Shih-Nan Hsiao¹, Yusuke Imai¹, Makoto Sekine¹, Ryutaro Suda², Yoshihide Kihara², Kenji Ishikawa¹, Masaru Hori¹ (1.Nagoya University, 2.Tokyo Electron Ltd. Miyagi)

3:05 PM - 3:35 PM JST(6:05 AM - 6:35 AM UTC)

[10p-E310-5]Advanced Plasma Etching Technology for Nanoscale Device Application

〇Michikazu Morimoto¹ (1.Hitachi High-Tech)

3:35 PM - 3:50 PM JST(6:35 AM - 6:50 AM UTC)

[10p-E310-6]Deposition Characteristics of a-C:H for Hard Mask using Cumene Plasma CVD

〇Shinjiro Ono¹, Takamasa Okumura¹, Kunihiro Kamataki¹, Kazunori Koga¹, Masaharu Shiratani¹ (1.Kyushu Univ.)

3:50 PM - 4:05 PM JST(6:50 AM - 7:05 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-E310-7]N-V center formation in nitrogen-doped diamond films grown by radical injection plasma-enhanced chemical vapor deposition

〇(M2)Yuto Yonehara¹, Mineo Hiramatsu¹, Keigo Takeda¹ (1.Meijo Univ.)

4:20 PM - 4:50 PM JST(7:20 AM - 7:50 AM UTC)

[10p-E310-8]Current Analytical and Measurement Technologies for Comprehensive Assessment of PFAS: Status and Challenges

〇Sachi Taniyasu¹ (1.AIST)

4:50 PM - 5:20 PM JST(7:50 AM - 8:20 AM UTC)

[10p-E310-9]Process Informatics in Semiconductor Manufacturing

〇Hironori Moki¹ (1.Tokyo Electron)

5:20 PM - 5:35 PM JST(8:20 AM - 8:35 AM UTC)

[10p-E310-10]Prediction of incident angle dependence of SiO₂ etching yield by MLP

〇Takashi Ichikawa¹, Kazuaki Kurihara¹, Takuyo Nakayama¹, Rina Takashima¹ (1.Kioxia Corporation)

5:35 PM - 5:45 PM JST(8:35 AM - 8:45 AM UTC)

[10p-E310-11]Closing Remarks