[10p-E310-1~11] Low-Temperature Plasma Technologies Enabling the Future of Semiconductor Manufacturing

3:05 PM - 3:35 PM JST(6:05 AM - 6:35 AM UTC)

[10p-E310-5] Advanced Plasma Etching Technology for Nanoscale Device Application

〇Michikazu Morimoto¹ (1.Hitachi High-Tech)

Keywords:

Plasma,Etching,ECR

In advanced logic device manufacturing, exemplified by FinFETs and GAA nanosheet structures, achieving both precise shape control and low-damage processing is essential for complex 3D and multi-material architectures. In this presentation, we introduce advanced plasma etching approach based on the combination of pulse modulation and cyclic processes. By leveraging temporal control of ion energy and reaction pathways, this method enables enhanced etching accuracy while minimizing damage to sensitive materials. The proposed technique demonstrates a promising solution for next-generation nanoscale device fabrication.