[10p-E310-1~11] Low-Temperature Plasma Technologies Enabling the Future of Semiconductor Manufacturing

3:50 PM - 4:05 PM JST(6:50 AM - 7:05 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-E310-7] N-V center formation in nitrogen-doped diamond films grown by radical injection plasma-enhanced chemical vapor deposition

〇(M2)Yuto Yonehara¹, Mineo Hiramatsu¹, Keigo Takeda¹ (1.Meijo Univ.)

Keywords:

diamond,chemical vapor deposition,N-V center

In this study, nitrogen-vacancy (N–V) center formation in nitrogen-doped diamond (NDD) films for quantum device applications was investigated using a radical injection plasma-enhanced chemical vapor deposition (RI-PECVD) process. The crystallinity and N–V center formation were evaluated by Raman spectroscopy and photoluminescence (PL) measurements and compared with those obtained by conventional MW-CVD. The results showed that the RI-PECVD process enhanced the PL intensity originating from N–V centers while maintaining the crystallinity of the films, suggesting that nitrogen-related active species generated by the ICP contributed to nitrogen incorporation into the diamond films.