[10p-F211-1~8] Interfacial Nanoelectrochemistry for Next-Generation Semiconductor Strategies - From Geopolitics to Advanced Wet Processing -

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[10p-F211-8] Reationship between Surface Condition and Surface charging of SiO₂ Wafers During Two-Fluid Spraying

〇Jundai Sato¹, Kouta Sugiura¹, Tatso Mori¹, Yusuke Ichino¹, Yoshiyuki Seike¹ (1.Aichi Inst)

Keywords:

semiconductor,ESD

In semiconductor device manufacturing, two-fluid spray cleaning is widely used for particle removal. However, organic contaminants remaining on wafers before cleaning can alter the wafer surface condition. In this study, experiments were conducted to clarify the relationship between the surface condition and surface charging of SiO₂ wafers during two-fluid spray cleaning.