The 87th JSAP Autumn Meeting 2026
Advanced Search

Session Details

Symposium (Oral)Symposium : Interfacial Nanoelectrochemistry for Next-Generation Semiconductor Strategies - From Geopolitics to Advanced Wet Processing -

[10p-F211-1~8]Interfacial Nanoelectrochemistry for Next-Generation Semiconductor Strategies - From Geopolitics to Advanced Wet Processing -

Thu. Sep 10, 2026 1:30 PM - 5:00 PM JST
Thu. Sep 10, 2026 4:30 AM - 8:00 AM UTC
F211 (Frontier Rsch. in Applied Sci. Bld.)
1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)

[10p-F211-1]Interpreting Global Affairs Through the Lens of Semiconductors

〇Yasu Ota1 (1.Hokkaido Univ.)
2:00 PM - 2:30 PM JST(5:00 AM - 5:30 AM UTC)

[10p-F211-2]Physical Cleaning Techniques in Semiconductor Cleaning Processes

〇Teruomi Minami1, Shogo Mizota1, Itaru Kanno1, Mitsunori Nakamori1 (1.Tokyo Electron Kyushu Ltd.)
2:30 PM - 3:00 PM JST(5:30 AM - 6:00 AM UTC)

[10p-F211-3]Utilization of Molecular Simulation in Wet Processes for 3D-Flash Development

〇Masayasu Miyata1 (1.Kioxia Frontier Tech. R&D)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-F211-4]Numerical Simulation of Liquid Replacement during Single-Wafer Cleaning Using an Impinging Jet

〇(D)Makoto Miwa1, Jukiya Ikegaya2, Tomoya Nishi3, Toshiyuki Sanada4 (1.GSST, Shizuoka Univ., 2.GSIST, Shizuoka Univ., 3.Ebara Corp., 4.Shizuoka Univ.)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[10p-F211-5]Consideration of ITO etching surface reaction mechanism with high temperature using H2 plasma

〇Ryohei Suzuki1, Yoshinori Kodama1, Kazuhisa Matsuda1, Katsuhisa Kugimiya1, Yoshiya Hagimoto1 (1.Sony Semiconductor Solutions Corp)
3:45 PM - 4:15 PM JST(6:45 AM - 7:15 AM UTC)

[10p-F211-6]Electrostatic charging phenomena in single-wafer semiconductor wet processes

〇Sato Masanobu1 (1.SCREEN Semiconductor Solutions Co., Ltd.)
4:15 PM - 4:45 PM JST(7:15 AM - 7:45 AM UTC)

[10p-F211-7]Elucidation of Wafer Charging Mechanism in Semiconductor Wet Cleaning Processes Using an Inkjet Method

〇Yuki Tsuchiya1, Yasunori Takahashi1, Kota Sugiura2, Jundai Sato2, Yoshiyuki Seike2 (1.Ricoh, 2.AIT)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[10p-F211-8]Reationship between Surface Condition and Surface charging of SiO2 Wafers During Two-Fluid Spraying

〇Jundai Sato1, Kouta Sugiura1, Tatso Mori1, Yusuke Ichino1, Yoshiyuki Seike1 (1.Aichi Inst)
Back to Category List