Presentation Information
[10p-PA2-12]Thermally-induced Crystallization Processes in Amorphous FeSn thin Films Studied by Electron Beam Radial Distribution Analysis
〇(M1)Atsuhiro Yamamoto1, Manabu Ishimaru1, Ryusuke Nakamura2 (1.Kyutech, 2.Univ. of Shiga Pref.)
Keywords:
TEM/STEM analysis,FeSn thin film,topological material
The topological material FeSn is expected to find applications in novel high-performance devices due to its exceptional magnetic and electrical properties, which originate from its kagome lattice. Although the amorphous phase has been reported to exhibit excellent physical responses, its application in devices requires thermal stability and identification of the precipitated phases. In this experiment, we performed radial distribution analysis using electron diffraction patterns obtained from transmission electron microscopy to determine the crystallization temperature and identify the precipitated phase. The results confirmed that FeSn thin films crystallize into FeSn2 at 200°C, and that FeSn becomes the dominant phase as the heating temperature increases.