Presentation Information
[10p-PA2-21]Influence of H2 Addition on the Physical Properties of Lightly Transition-Metal-Doped Epitaxial ITO Films Deposited by RF Magnetron Sputtering
〇Ayano Soga1, Toshihiro Nakamura1,2 (1.Kyoto Univ., 2.ILAS, Kyoto Univ.)
Keywords:
transparent conductive film,diluted magnetic semiconductor,epitaxial film
The gas composition during sputtering significantly influences the physical properties of transition metal-doped indium tin oxide (ITO) thin films. This investigation focuses on lightly Cr-doped ITO thin films by radio-frequency magnetron sputtering using an argon-hydrogen gas mixture. This study evaluated the effects of hydrogen addition on the crystallinity, electrical, optical, and magnetic properties of these films. Epitaxial Cr-doped ITO films, with varying Cr concentrations, were deposited on single-crystal yttria-stabilized zirconia substrates oriented along the (111) crystallographic plane. The findings indicate that the films maintained epitaxial growth despite the addition of hydrogen, and that the magnetization values were influenced by this addition.