[10p-PA2-1~38] 6.4 Thin films and New materials

[10p-PA2-6] Growth-temperature-dependent crystal orientation switching in Tellurium deposited on Bi₂Te₃ buffer layer

〇Yuta Kobayashi¹, Shunzhen Wang¹, Arata Mitsuzuka¹, Takuto Hiraoka¹, Masashi Kawaguchi¹, Masamitsu Hayashi¹ (1.Univ. Tokyo)

Keywords:

tellurium,anisotropic materials,crystal orientation control

In the presentation, we report the control of crystal orientation in van der Waals Te fhin films using Bi₂Te₃ buffer layer. By varying the substrate temperature during Te deposition on Bi₂Te₃, we found that the Te c-axis orientation switches from in-plane to out-of-plane. The structural and surface properties of the Bi₂Te₃/Te thin films are discussed based on X-ray diffraction, Raman spectroscopy, and atomic force microscopy.