[10p-PB1-1~27] 6.3 Oxide electronics

[10p-PB1-27] Evaluation of Oriented Ga₂O₃ Thin Films synthesized by using PLD

〇Susumu Shiraki¹ (1.Nippon Inst. Tech.)

Keywords:

thin flim,Gallium oxide,photocatalyst

Gallium oxide (Ga₂O₃) is a promising photocatalyst for hydrogen production from water and carbon monoxide production from carbon dioxide. To clarify the reaction mechanisms on surfaces, well-defined model surfaces with controlled crystal structures are required. In this study, Ga₂O₃ thin films were deposited on Al₂O₃(0001) single-crystal substrates by pulsed laser deposition using the fifth harmonic of a Nd:YAG laser (213 nm). The films were grown at an oxygen pressure of 2.0 Pa and a substrate temperature of 750 °C. Structural, compositional, and optical properties were investigated by X-ray diffraction (XRD), Auger electron spectroscopy (AES), and UV–Vis spectroscopy. XRD and reciprocal space mapping revealed the coexistence of β-Ga₂O₃-(-201)-oriented and γ-Ga₂O₃-(111)-oriented phases. UV–Vis measurements showed a sharp absorption edge below 260 nm, and the optical bandgap was estimated to be 4.8 eV from a Tauc plot. AES results will also be presented and discussed.