Presentation Information
[10p-PB1-8]Microstructure and Compositional Distribution of V/TaOx-based Threshold Switching Memristor with and without Electrical Operations
〇Kazuma Murata1, Zih-Siao Liao2, Jen-Sue Chen2, Yukio Sato1 (1.Kumamoto Univ., 2.National Cheng Kung Univ.)
Keywords:
transition metal oxide,memristor,transmission electron microscopy
Threshold switching memristors (TSMs) are highly anticipated for use in neuromorphic computing due to their ability to emulate neuronal firing behaviors. However, the operating mechanism of the novel V/TaOx-based TSM with a thin-film multilayer structure remains unclear, and analyzing the microstructure and compositional distribution in microscopic regions is key to clarifying this mechanism. In this study, we elcidated the differences in the microstructure and compositional distribution with and without electrical operations using transmission electron microscopy.