[10p-S1-1~20] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[10p-S1-11] Silicon recessed anti-reflective structure

〇Toshifumi Yokoyama¹, Yoshiaki Nishi¹, Yoshihiro Noguchi¹, Masahiro Oda¹ (1.TPSCo)

Keywords:

image sensor,anti-reflective structure

To increase the quantum efficiency of image sensors, we investigated a silicon-recessed anti-reflective structure. Samples for reflectivity measurement were fabricated using lithography with an ArF exposure machine and dry etching. Reflectivity measurements of the evaluation samples confirmed a significant decrease in reflectivity in the short-wavelength region compared to conventional anti-reflective structures.