The 87th JSAP Autumn Meeting 2026
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Session Details

Oral presentation13 Semiconductors : 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[10p-S1-1~20]13.5 Semiconductor devices/ Interconnect/ Integration technologies

Thu. Sep 10, 2026 1:30 PM - 7:00 PM JST
Thu. Sep 10, 2026 4:30 AM - 10:00 AM UTC
S1 (First Year Education S Bldg.)
1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)

[10p-S1-1][The 4th Diversity & Inclusion Awards Young Female Researchers Award] Comprehensive research and development of two-terminal resistive memory for the big data era.

〇Marina Yamaguchi1 (1.KIOXIA)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-S1-2]Write Technique to Suppress Data-retention Degradation of Intermediate States in Multi-Level ReRAM

〇(M1)Ken Sugimoto1, Yusuke Hirata1, Naoko Misawa1, Chihiro Matsui1, Ken Takeuchi1 (1.Univ. Tokyo)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[10p-S1-3]Embedded flash memory with suppressed endurance characteristic degradation

〇HIROSHIGE HIRANO1, HIROAKI KURIYAMA1, ATSUSHI NOMA1 (1.Tower Partners Semiconductor Co., Ltd)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[10p-S1-4]Compact modeling of cell-to-cell interference in horizontal channel flash memories

〇Toshiya Ishikawa1, Shoto Nodo1, Nayuta Kariya1, Shinya Naito1, Takashi Kurusu1 (1.KIOXIA Corp.)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-S1-5]Suppression of SiO2 Deformation and Warpage in 3D Flash Memory Stacked Structures through Investigated Drying Processes

〇Shunsuke Aita1, Kazutaka Suzuki1, Katsuhiro Sato1, Takatsugu Sakai2, Shunsuke Saito2 (1.KIOXIA Corp., 2.Sandisk GK)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[10p-S1-6]Improvements of GAAFET fabrication processes selected for In-line monitoring technology

〇Shin Kono1, Atsushi Yagishita1, Chia-Tsong Chen1, Kazuya Uejima1, Takahiro Goya1, Toshifumi Irisawa1, Takashi Matsukawa1, Yoshihiro Hayashi1 (1.National Institute of Advanced Industrial Science and Technology)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-S1-7]Single-crystalline growth of Ru(10-10) thin films on Al2O3(11-20) substrates via getter-assisted vacuum improvement

〇Kosuke Imamura1, Haruki Tomioka1, Satoshi Tsuneizumi1, Naoki Isogai1, Tomoya Nakatani2, Mitsuru Ohtake1 (1.Yokohama Nat. Univ., 2.NIMS)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[10p-S1-8]DFTB Parametrization for Evaluation of Size Effect in Mo

〇Takahisa Tanaka1 (1.Keio Univ.)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-S1-9]Size dependence in electrical resistivity of topological semimetal Cu-Pd alloys

〇(M1)Masahiro Kushibiki1, Mihyeon Kim1, Yuta Saito1,2 (1.Tohoku Univ., 2.GXT, Tohoku Univ.)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[10p-S1-10]High-sensitivity BSI image sensor with ZrO AR film

〇Masayuki Nakamura1, Yoshiaki Nishi1, Toshifumi Yokoyama1, Masahiro Oda1, Nobuyoshi Takahashi1 (1.TPSCo)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[10p-S1-11]Silicon recessed anti-reflective structure

〇Toshifumi Yokoyama1, Yoshiaki Nishi1, Yoshihiro Noguchi1, Masahiro Oda1 (1.TPSCo)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[10p-S1-12]Study on SiCN Bonding Films Prepared by Atomic Layer Deposition

〇Koya Takahashi1, Yuuki Araga1, Kenji Takahashi1, Hideki Takagi1, Katsuya Kikuchi1 (1.AIST)
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[10p-S1-13]GeOI Heterogeneous Integration and Device Fabrication Based on Wafer Bonding Technology

〇(D)Xiaofeng Duan1,2,3, Shaoteng Wu1,3, Mengnan Ke2, Junwei Luo1,3 (1.Inst. of Semiconductors, CAS, 2.Yokohama National Univ., 3.Univ. of CAS)
5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-S1-14]Visualization and Assessment of Strength Degradation at the Edge Region in Wafer Bonding

〇(M1)Ryuki Kusakabe1, Ryota Ogata1, Hyuga Ishii1, Shumpei Murakami1, Marie Sano1, Fumihiro Inoue1 (1.YOKOHAMA Nat. Univ.)
5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-S1-15]Estimation of Chemical Bonding States at Direct Wafer Bonding Interfaces
Based on Delamination Behavior

〇(M1)Shumpei Murakami1, Kusakabe Ryuki1, Ogata Ryota1, Ishii Hyuga1, Kitagawa Hayato1, Inoue Fumihiro1 (1.YOKOHAMA Nat. Univ.)
5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-S1-16]Study of Stress Suppression Using a Negative Thermal Expansion Material Liner for Through-Silicon Vias (TSVs)

〇YIQING XU1, RUOBO LAN1, HISASHI KINO1 (1.Kyushu Univ.)
6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-S1-17]Study of the Underfill with Negative Thermal Expansion Filler for Suppressing Thermal Stress due to CTE Mismatch in 3D ICs

〇Ruobo Lan1, YIQING XU1, HISASHI KINO1 (1.Kyushu Univ.)
6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)

[10p-S1-18]Nanoscale Structural Modification at Cu/Low-k Interfaces by AFM-IR

〇Tatsuhiro Nagasaka1, Hirofumi Seki1 (1.Toray Research Center)
6:30 PM - 6:45 PM JST(9:30 AM - 9:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-S1-19]Low temperature bonding for copper film on Si substrate using hydrogen plasma treatment

〇Atsuto Nishimura1, Masato Ota1, Tsubasa Kobayashi1, Hiroaki Kakiuchi1, Hiromasa Ohmi1 (1.UOsaka)
6:45 PM - 7:00 PM JST(9:45 AM - 10:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-S1-20]Fabrication and Characterization of Indium Wires for 3D Packaging of Quantum Computer

〇Yuki Sakamoto1, Yuji Kato1, Sota Koyama1, Hiroki Nakamura1, Hisashi Kino3, Takafumi Fukushima1,2, Tetsu Tanaka1,2 (1.Grad. Sch. of Eng., Tohoku Univ., 2.Grad. Sch. of Biomed. Eng., Tohoku Univ., 3.Grad. Sch. of ISEE, Kyushu Univ.)
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