Presentation Information

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[10p-S1-12]Study on SiCN Bonding Films Prepared by Atomic Layer Deposition

〇Koya Takahashi¹, Yuuki Araga¹, Kenji Takahashi¹, Hideki Takagi¹, Katsuya Kikuchi¹ (1.AIST)

Keywords:

Wafer on Wafer Bonding,Atomic Layer Deposition

The properties of SiCN bonding films deposited by atomic layer deposition (ALD) were evaluated for suppressing Cu diffusion in hybrid bonding. Increasing the N2 plasma time enhanced the proportion of C–N bonds, resulting in improved film uniformity. However, a large number of voids were formed after annealing due to outgassing. These results indicate that adsorption site control is essential for achieving uniform films, while reducing outgassing is necessary to suppress void formation.

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