[10p-S1-1~20] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)

[10p-S1-18] Nanoscale Structural Modification at Cu/Low-k Interfaces by AFM-IR

〇Tatsuhiro Nagasaka¹, Hirofumi Seki¹ (1.Toray Research Center)

Keywords:

AFM-IR,Nanoscale Structural Modification

Nanoscale chemical structural changes near Cu/Low-k interfaces in porous SiOC films were analyzed using AFM-IR. A decrease in Si-CH₃, disappearance of Si-H, and increase in Si-OH were observed near the interface, indicating demethylation and hydrophilization induced by process damage. These modifications are considered to contribute to increased dielectric constant and leakage current. The results demonstrate the effectiveness of AFM-IR for localized structural analysis.