Presentation Information
[10p-S2-4]Recent advances in voltage control of spin at ultrathin magnetic film interfaces: Voltage-driven static magnetization switching
〇Hiroyasu Nakayama1, Takayuki Nozaki1, Toshiki Yamaji1, Tomohiro Nozaki1, Hiroshi Imamura1, Shinji Yuasa1,2 (1.AIST, 2.Tohoku Univ.)
Keywords:
spintronics,ultrathin magnetic films,voltage-controlled magnetic anisotropy effect
Magnetoresistive random-access memory (MRAM) is an attractive candidate for next-generation memory owing to its high-speed operation, non-volatility, and excellent endurance. However, reducing write power consumption remains a key challenge in existing current-driven approaches. In this talk, we propose a novel method for controlling the magnetization of ultrathin magnetic films using voltage, and show that the use of an artificial antiferromagnetic structure enables robust and stable write operation over a wide range of pulse widths. These results provide important guidelines for achieving reliable operation and large-scale integration of voltage-controlled MRAM.