Presentation Information
[11a-A13-2]Determination of heat generation and transfer coefficient in multi wire saw process for 6”SiC crystal
〇Susumu Maeda1, Fumiya Kawate1, Robelto Iaconi1, Saeed Sepasy2, Yoshifumi Watanabe2 (1.Aixtal Corp., 2.Mipox Corp.)
Keywords:
Multi wire saw,Slicing temperature,Parameter Identification
With the widespread adoption of SiC wafers for power semiconductors, there is an increasing demand for higher efficiency and quality in the crystal slicing process using multi-wire saws (MWS). In machining extremely hard SiC crystals, a significant amount of heat is generated due to friction and fracture, and the resulting temperature rise in the crystal can severely affect the geometric quality of the wafers. However, directly measuring the crystal temperature during slicing is difficult, and the critical physical parameters essential for thermal analysis have remained unknown. This study aims to measure the actual temperature of SiC crystals and attempts to determine the parameters that yield thermal analysis results closely matching the experimental data through finite element method (FEM) analysis and Bayesian optimization.