The 87th JSAP Autumn Meeting 2026
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Session Details

Oral presentation15 Crystal Engineering : 15.6 Group IV Compound Semiconductors (SiC)

[11a-A13-1~8]15.6 Group IV Compound Semiconductors (SiC)

Fri. Sep 11, 2026 10:30 AM - 12:30 PM JST
Fri. Sep 11, 2026 1:30 AM - 3:30 AM UTC
A13 (Faculty of Info. Sci. & Tech. Bldg.)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-A13-1]Robust Optimization of Processing Conditions for SiC Laser Slicing Using a Quality Prediction Model

〇Akihiro Yasukawa1, Keiichi Osada1, Tsuyoshi Naya2, Hiuma Iwase2, Takashi Kawabata2, Masaki Takaishi1 (1.Aixtal, 2.Nakamura-Tome)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[11a-A13-2]Determination of heat generation and transfer coefficient in multi wire saw process for 6”SiC crystal

〇Susumu Maeda1, Fumiya Kawate1, Robelto Iaconi1, Saeed Sepasy2, Yoshifumi Watanabe2 (1.Aixtal Corp., 2.Mipox Corp.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[11a-A13-3]Whole-wafer defect observation of a 200-mm 4H-SiC wafer by synchrotron X-ray topography

〇Shunta Harada1, Juhyeong Sun1, Kentaro Kajiwara2, Takatoshi Shimura3 (1.Nagoya Univ., 2.JASRI, 3.Waseda Univ.)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[11a-A13-4]Automatic Detection of Threading Dislocations in Synchrotron X-ray Topography
Images of 4H-SiC Using YOLOv8s and CBAM-Augmented Faster R-CNN

〇(M2)WEIYUAN XIA1, Rui Zhou1, Yuhui Huang1, Takayoshi Shimura1 (1.Waseda Univ.)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[11a-A13-5]Study on the Growth of Smooth, Fluorescent 4H-SiC Epitaxial Thick Films Using the Near-Field Sublimation Method

〇(M2)Aoto Hashiguchi1, Ryuya Matsumoto1, Kyoya Okawa1, Shoki Ohara1, Eri Akazawa2, Atsushi Suzuki2, Weifang Lu3, Satoshi Kamiyama1, Motoaki Iwaya1, Tetsuya Takeuchi1 (1.Meijo Univ., 2.E&E Evolution L td., 3.Xiamen Univ.)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-A13-6]B supply stabilization by RF coil position control for the achievement of thick-film fluorescent 4H-SiC

〇Kyoya Okawa1, Aoto Hashiguchi1, Ryuya Matsumoto1, Shoki Ohara1, Motoaki Iwaya1, Tetsuya Takeuchi1, Atsushi Suzuki2, Eri Akazawa2, Weifang Lu3, Satoshi Kamiyama1 (1.Meijo Univ., 2.E&E Evolution Ltd., 3.Xiamen Univ.)
12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-A13-7]Study on Enhancement of Anodic Oxidation Behavior of 4H-SiC

〇Shoki Ohara1, Ryuya Matsumoto1, Aoto Hashiguchi1, Kyoya Okawa1, Motoaki Iwaya1, Tetsuya Takeuchi1, Atsushi Suzuki2, Eri Akazawa2, Yiyu Ou3, Haiyan Ou3, Satoshi Kamiyama1 (1.Meijo Univ., 2.E&E Evolution Ltd., 3.Technical Univ. of Denmark)
12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[11a-A13-8]Effects of Pulsed Anodic Oxidation Conditions on the Optical Properties of Porous Fluorescent 4H-SiC

〇Ryuya Matsumoto1, Shoki Ohara1, Aoto Hashiguchi1, Kyoya Okawa1, Atsushi Suzuki3, Eri Akazawa3, Haiyan Ou2, Yiyu Ou2, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1 (1.Meijo Univ., 2.DTU, 3.E&E evolution)
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