[11a-A13-1~8] 15.6 Group IV Compound Semiconductors (SiC)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[11a-A13-3] Whole-wafer defect observation of a 200-mm 4H-SiC wafer by synchrotron X-ray topography

〇Shunta Harada¹, Juhyeong Sun¹, Kentaro Kajiwara², Takatoshi Shimura³ (1.Nagoya Univ., 2.JASRI, 3.Waseda Univ.)

Keywords:

SiC,dislocation,X-ray topography

We applied wide-field synchrotron X-ray topography at SPring-8 BL16B2 to whole-wafer defect observation of a 200-mm 4H-SiC wafer. High-resolution X-ray topography images were acquired over the entire wafer area and tiled to reconstruct a wafer-scale image. Clear contrasts corresponding to basal plane dislocations (BPDs), threading screw dislocations (TSDs), and threading edge dislocations (TEDs), which are difficult to observe by laboratory XRT, were obtained. We also discuss image integration of multiple XRT images acquired at slightly different incident angles near the diffraction condition, including alignment procedures to suppress contrast displacement and duplication.