[11a-A13-1~8] 15.6 Group IV Compound Semiconductors (SiC)

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[11a-A13-5] Study on the Growth of Smooth, Fluorescent 4H-SiC Epitaxial Thick Films Using the Near-Field Sublimation Method

〇(M2)Aoto Hashiguchi¹, Ryuya Matsumoto¹, Kyoya Okawa¹, Shoki Ohara¹, Eri Akazawa², Atsushi Suzuki², Weifang Lu³, Satoshi Kamiyama¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹ (1.Meijo Univ., 2.E&E Evolution L td., 3.Xiamen Univ.)

Keywords:

fiuorescent SiC

4H-SiC (f-SiC) co-doped with B and N shows promise as a phosphor for white LEDs; however, surface degradation caused by unstable BN supply during thick-film growth remains a challenge. In this study, we applied conditions to stabilize BN supply and fabricated a 100 μm thick film using the proximity sublimation method. As a result, we achieved the target film thickness while maintaining smooth step-flow growth, and PL intensity was preserved and improved. This demonstrates that it is possible to achieve both thick-film growth and the maintenance of luminescence properties, laying the groundwork for the fabrication of films exceeding 200 μm in thickness.