[11a-A13-1~8] 15.6 Group IV Compound Semiconductors (SiC)

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-A13-6] B supply stabilization by RF coil position control for the achievement of thick-film fluorescent 4H-SiC

〇Kyoya Okawa¹, Aoto Hashiguchi¹, Ryuya Matsumoto¹, Shoki Ohara¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Atsushi Suzuki², Eri Akazawa², Weifang Lu³, Satoshi Kamiyama¹ (1.Meijo Univ., 2.E&E Evolution Ltd., 3.Xiamen Univ.)

Keywords:

fluorescent SiC,closed sublimation technique

To achive fluorescent SiC with a thickness of approximately 200 µm, the feasibility of achieving growth-rate maintenance while stabilizing the B supply by RF coil position control was investigated. By suppressing the sublimation rate of BN powder through RF coil position control, a useful guideline for stabilizing the B supply during long-term growth was obtained. On the other hand, a decrease in the growth rate was identified as a new challenge. Further stabilization of the B supply during long-term growth while maintaining a high growth rate is required for the achievement of thick-film fluorescent SiC.