[11a-A13-1~8] 15.6 Group IV Compound Semiconductors (SiC)

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-A13-7] Study on Enhancement of Anodic Oxidation Behavior of 4H-SiC

〇Shoki Ohara¹, Ryuya Matsumoto¹, Aoto Hashiguchi¹, Kyoya Okawa¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Atsushi Suzuki², Eri Akazawa², Yiyu Ou³, Haiyan Ou³, Satoshi Kamiyama¹ (1.Meijo Univ., 2.E&E Evolution Ltd., 3.Technical Univ. of Denmark)

Keywords:

semiconductor,fluorescent SiC

B and N doped SiC, known as fluorescent SiC, exhibits yellow-orange emission at approximately 580 nm. In addition, porous structures formed by anodic oxidation produce short-wavelength emission around 460 nm, making this material a promising candidate for high-color-rendering white LEDs. However, the anodic oxidation process suffers from a low formation rate and unstable current response. In this study, the effects of pulsed voltage control with a negative base voltage and varying duty cycles on the anodic oxidation behavior of 4H-SiC were investigated.