Presentation Information
[11a-A13-8]Effects of Pulsed Anodic Oxidation Conditions on the Optical Properties of Porous Fluorescent 4H-SiC
〇Ryuya Matsumoto1, Shoki Ohara1, Aoto Hashiguchi1, Kyoya Okawa1, Atsushi Suzuki3, Eri Akazawa3, Haiyan Ou2, Yiyu Ou2, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1 (1.Meijo Univ., 2.DTU, 3.E&E evolution)
Keywords:
SiC
Pulsed anodic oxidation was applied to B- and N-doped SiC (fluorescent SiC), and the effects of the base voltage on the thickness and reflectance characteristics of the porous layer were evaluated. The thickness increased up to −4 V and decreased at −5 V. This behavior is attributed to the promotion of the reaction due to the relaxation of surface charging under negative voltage, while excessive voltage leads to structural instability. The reflectance correlated with the thickness and increased in the ultraviolet region, suggesting a potential reduction in excitation efficiency.