[11a-A21-1~6] 13.7 Compound and power devices, process technology and characterization

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[11a-A21-1] Analysis of tunneling current and contact resistivity at heavily doped n-GaN contacts

〇Masahiro Hara¹, Mikito Nozaki¹, Takuma Kobayashi¹, Heiji Watanabe¹ (1.UOsaka)

Keywords:

gallium nitride,ohmic contacts,tunneling current