The 87th JSAP Autumn Meeting 2026
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Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[11a-A21-1~6]13.7 Compound and power devices, process technology and characterization

Fri. Sep 11, 2026 11:00 AM - 12:30 PM JST
Fri. Sep 11, 2026 2:00 AM - 3:30 AM UTC
A21 (Faculty of Info. Sci. & Tech. Bldg.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[11a-A21-1]Analysis of tunneling current and contact resistivity at heavily doped n-GaN contacts

〇Masahiro Hara1, Mikito Nozaki1, Takuma Kobayashi1, Heiji Watanabe1 (1.UOsaka)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[11a-A21-2]Modeling of conduction mechanisms for annealed contacts on heavily doped n-type GaN

〇Bryan Chong1, Masahiro Hara1, Mikito Nozaki1, Takuma Kobayashi1, Heiji Watanabe1 (1.UOsaka)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[11a-A21-3]Investigation of Dislocation Distribution in GaN Using the Laser Heterodyne Photothermal Displacement Method

〇Yuta Hosokoshi1, Yoshio Honda2, Atsuhiko Fukuyama1 (1.Univ. of Miyazaki, 2.Nagoya Univ.)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[11a-A21-4]Optimization of SEM-Cathodoluminescence Conditions for Threading Dislocation Analysis in GaN

〇Shunsuke Asahina1,2, Yusuke Sakuda1,2 (1.JEOL Ltd., 2.AMA. Tohoku Univ.)
12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-A21-5]Effects of Argon Atom Beam Irradiation on AlGaN/GaN Heterostructures

〇(M2)Akira Rin1, Hikaru Iwamoto1, Naoteru Shigekawa1 (1.Osaka Metropolitan Univ.)
12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[11a-A21-6]Ion species dependence of depth profiles and electronic stopping in channeling implantation into GaN

〇Hideaki Minagawa1, Kazuhiro Yokota1, Masahiko Aoki1, Atsushi Suyama1 (1.Ion Technology Center, Co., Ltd.)
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