[11a-A21-1~6] 13.7 Compound and power devices, process technology and characterization

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[11a-A21-3] Investigation of Dislocation Distribution in GaN Using the Laser Heterodyne Photothermal Displacement Method

〇Yuta Hosokoshi¹, Yoshio Honda², Atsuhiko Fukuyama¹ (1.Univ. of Miyazaki, 2.Nagoya Univ.)

Keywords:

Nitride Semiconductor,Physical Property Evaluation,GaN