[11a-A21-1~6] 13.7 Compound and power devices, process technology and characterization

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[11a-A21-4] Optimization of SEM-Cathodoluminescence Conditions for Threading Dislocation Analysis in GaN

〇Shunsuke Asahina^1,2, Yusuke Sakuda^1,2 (1.JEOL Ltd., 2.AMA. Tohoku Univ.)

Keywords:

semiconductor,Threading Dislocation,Cathodoluminescence

Threading dislocations in GaN were analyzed using low-voltage SEM cathodoluminescence (SEM-CL). Clear dislocation contrast was obtained at 3–5 kV, whereas 10 kV reduced contrast due to a larger excitation volume. Considering electron penetration depth and spatial resolution, approximately 3 kV was identified as the optimum condition for high-resolution dislocation imaging in GaN.