[11a-A21-1~6] 13.7 Compound and power devices, process technology and characterization

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-A21-5] Effects of Argon Atom Beam Irradiation on AlGaN/GaN Heterostructures

〇(M2)Akira Rin¹, Hikaru Iwamoto¹, Naoteru Shigekawa¹ (1.Osaka Metropolitan Univ.)

Keywords:

GaN,semiconductor

We have previously evaluated the electrical and thermal properties of GaN HEMTs. The ultimate goal of our research is to fabricate N-polar GaN HEMTs using the surface activated bonding (SAB) method to achieve both excellent high-frequency performance and heat dissipation. As a preliminary investigation toward realizing this device, we examined the effects of Argon fast atom beam (Ar-FAB) irradiation on GaN HEMTs. Since Ar-FAB irradiation is an essential surface pre-treatment for the SAB process, it is critical to investigate the physical damage it introduces to the epitaxial structure and its impact on the device characteristics before full-scale fabrication.